gb10slt12 - 252 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ silicon carbide power schottky diode features ? high avalanche (uis) capability ? enhanced surge current capability ? 175 c maximum operating temperature ? temperature independent switching behavior ? positive temperature coefficient of v f ? extremely fast switching speeds ? superior figure of merit q c /i f advantages ? low standby power losses ? improved circuit efficiency (lower overall cost) ? low switching losses ? ease of paralleling devices w ithout thermal runaway ? smaller heat sink requirements ? low reverse recovery current ? low device capacitance ? low reverse leakage current a t operating temperature absolute maximum ratings parameter repetitive peak reverse voltage continuous forward current non-repetitive peak forward surge current, half sine wave repetitive peak forward surge current, half sine wave non-repetitive peak forward surge current i 2 t value non-repetitive avalanche energy diode ruggedness power dissipation operating and storage temperature electrical characteristics parameter diode forward voltage reverse current total capacitive charge switching time total capacitance thermal / mechanical characteristics thermal resistance, junction - case http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ package to-252-2l applications overall cost) ithout thermal runaway t operating temperature ? power factor correction (pfc) ? switched- mode power supply (smps) ? solar inverters ? wind turbine inverters ? motor drives ? induction heating ? uninterruptible power supply (ups) ? high voltage multipliers symbol conditions values v rrm 1200 i f t c = 25 c, d = 1 45 t c = 135 c, d = 1 22 t c = 165 c, d = 1 10 i f,sm t c = 25 c, t p = 10 ms 81 t c = 150 c, t p = 10 ms 65 i f,rm t c = 25 c, t p = 10 ms 50 t c = 150 c, t p = 10 ms 35 i f,max t c = 25 c, t p = 10 s 860 i 2 dt t c = 25 c, t p = 10 ms 30 e as l = 5 mh, i av = 10 a, v dd = 60 v 150 dv/dt v r = 0 ~ 960 v 100 p tot t c = 25 c 345 t j , t stg - 55 to 175 symbol conditions values min. typ. v f i f = 10 a, t j = 25 c 1.5 i f = 10 a, t j = 175 c 2.3 i r v r = 1200 v, t j = 25 c 1 v r = 1200 v, t j = 175 c 8 q c i f i f,max di f /dt = 200 a/s t j = 175 c v r = 400 v 37 v r = 800 v 56 t s v r = 400 v < 10 v r = 800 v c v r = 1 v, f = 1 mhz, t j = 25 c 616 v r = 800 v, f = 1 mhz, t j = 25 c 41 r thjc 0.43 v rrm i f (tc = 1 3 q c case 1 2 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 1 of 6 mode power supply (smps) values unit 1200 v a a a a a 2 s mj v/s w 55 to 175 c values unit max. 1.8 v 2.7 14 a 95 nc ns pf c/w = 1200 v 3 5c) = 22 a = 56 nc
gb10slt12 - 252 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ i f = f(v f ,t j ); t p = 300 s figure 1: typical forward characteristics i r = f(v r ,t j ) figure 3: typical reverse characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ s i f = f(v f ,t j ); t p = 300 figure 1: typical forward characteristics figure 2: typical high current forward characteristics p tot = f(t j ) figure 3: typical reverse characteristics figure 4: power derating curve http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 2 of 6 = 300 s figure 2: typical high current forward characteristics power derating curve
gb10slt12 - 252 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ i f = f(t c ); d = t p /t, t p = 10 s figure 5: current derating curves q c = f(v r ); t j = 25 c ; f = 1mhz figure 7: typical capacitive charge vs. reverse voltage characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ = 10 s c = f(v r ); t j = 25 c ; f = 1mhz figure 5: current derating curves figure 6: typical junction capacitance vs reverse voltage characteristics ; f = 1mhz e c = f(v r ); t j = 25 c ; f = 1mhz typical capacitive charge vs. characteristics figure 8: typical capacitive energy vs. reverse voltage characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 3 of 6 ; f = 1mhz figure 6: typical junction capacitance vs reverse voltage characteristics ; f = 1mhz figure 8: typical capacitive energy vs. characteristics
gb10slt12 - 252 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ figure i f = f(v f , t j ) figure 10 : forward curve model http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ z th,jc = f(t p ,d); d = t p /t figure 9: transient thermal impedance i f = (v f C v bi )/r built-in voltage (v v bi (t j ) = m*t j + b, m = -1.32e- 03, b = 0.915 differential resistance (r r diff (t j ) = a*t j 2 + b*t a = 7.30e- 05, b = 8.99e : forward curve model http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 4 of 6 )/r diff voltage (v bi ): + b, 03, b = 0.915 differential resistance (r diff ): + b*t j + c (?); 05, b = 8.99e -03, c = 2.26
gb10slt12 - 252 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ package dimensions: to - 252 - 2l recommended solder pad layout note 1. controlled dimension is inch. dimension in bracket is millimeter. 2. dimensions do not include end flash, mold flash, material protrusions 0. 265 (6. 73 ) 0. 252 (6. 40 ) 0. 215 (5. 46 ) 0. 205 (5. 21 ) 0. 245 (6. 22 ) 0. 236 (6. 00 ) 0. 050 ( 0. 035 ( 0 0. 409 ( 0. 370 0. 045 (1. 14 ) 0. 030 (0. 77 ) 0. 035 ( 0 0. 025 ( 0 0. 090 bsc (2. 286 bsc ) 0. 180 bsc (4. 572 bsc ) 0. 236 (6. 00 ) 0. 118 (3. 00 ) 0. 055 (1. 40 ) 0. 055 (1 0. 090 (2. 29 ) 0. 090 (2. 29 0. 256 (6. 50 ) 0. 246 (6 . http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ package outline 1. controlled dimension is inch. dimension in bracket is millimeter. 2. dimensions do not include end flash, mold flash, material protrusions 1 . 27 ) 0 . 89 ) ( 10 . 40 ) (9. 40 ) 0 . 88 ) 0 . 64 ) 0. 094 (2. 38 ) 0. 087 (2. 20 ) 0. 023 (0. 58 ) 0. 018 (0. 46 ) seating plane 0. 005 (0. 127) max 0. 070 (1. 77 ) 0. 055 (1. 40 ) 0. 020 bsc (0. 508 bsc ) 0. 173 min 0. 023 (0. 58 ) 0. 018 (0. 46 ) . 40 ) 29 ) 25 ) http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 5 of 6 0. 205 (5. 21 ) min 173 (4. 40 ) min 0. 1080 ref (2. 743 ref )
gb10slt12 - 252 1200 v sic mps? diode copyright ? 2018 genesic semiconductor inc. all rights reserved the information in this document is subject to change without notice feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implem ented january 2, 2013. rohs declarations for this product can be obtained from your genesic representative. reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future, genesic representative to insure you get the most up information (reach article 6 7) is also available upon request. this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury including but not limited to equipment used in the operation of nuclear facilities, life defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or implied to any intellectual property rights is granted by this document. related links ? soldering document: http://www.genesicsemi.com/quality/quality ? tin-whisker report: http://www.genesicsemi.com/quality/compliance/ ? reliability report: http://www.genesicsemi.com/quality/reliability/ copyright ? 2018 genesic semiconductor inc. all rights reserved the information in this document is subject to change without notice 43670 trade center place suite 155 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive ented january 2, 2013. rohs declarations for this product can be obtained from your substances of high concern (svhcs) information is available for this product. since the european chemi has published notice of their intent to frequently revise the svhc listing for the foreseeable future, representative to insure you get the most up -to-date reach svhc declaration. reac 7) is also available upon request. this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury including but not limited to equipment used in the operation of nuclear facilities, life - support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or intellectual property rights is granted by this document. http://www.genesicsemi.com/quality/quality -manual/ http://www.genesicsemi.com/quality/compliance/ http://www.genesicsemi.com/quality/reliability/ published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 page 6 of 6 restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive ented january 2, 2013. rohs declarations for this product can be obtained from your substances of high concern (svhcs) information is available for this product. since the european chemi cal agency has published notice of their intent to frequently revise the svhc listing for the foreseeable future, please contact a svhc declaration. reac h banned substance this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or
gb10slt12 - 252 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ spice model parameters this is a s ecure document. please c opy this code from the spice model pdf file on our website ( http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/gb10slt12 into ltspice (version 4) sof tware for simulation of the g * genesic semiconductor sic mps * revision: 1.1 * date: february-2018 ************************************************************************** ** to-252- 2 package ************************************************************************** .subckt gb10slt12 a k case l_anode a ad 6n d1 ad case g l_cathode k case 6n .ends ************************************************************************** .subckt gb10slt12 anode kathode d1 anode kathode gc10mps12 _schottky .model gc10mps12 _schottky d + is 8.721e- 15 + n 1 + eg 1.2 + trs1 0.005434 + cjo 8.59e-10 + m 0.438 + tt 1.00e-10 + ibv 1e-06 + iave 10 + mfg genesic_semi .ends * end of GB10SLT12-252 spice model ************************************************************************** * this model is provided "as is, where is, and with no warranty of any kind * either expressed or implied, including but not limited to any implied * warranties of merchantability a http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ this is a s ecure document. please c opy this code from the spice model pdf file on our website http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/gb10slt12 tware for simulation of the g b10slt12-252. genesic semiconductor sic mps tm rectifier ************************************************************************** 2 package ************************************************************************** l_anode a ad 6n d1 ad case g c10mps12 l_cathode k case 6n ************************************************************************** anode kathode _schottky _schottky d 15 rs 0.062 ikf 500 xti 2 trs2 2.717e-05 vj 0.879 fc 0.5 bv 1600 vpk 1200 type sic_mps tm spice model ************************************************************************** this model is provided "as is, where is, and with no warranty of any kind * either expressed or implied, including but not limited to any implied * warranties of merchantability a nd fitness for a particular purpose." http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 1 of 1 this is a s ecure document. please c opy this code from the spice model pdf file on our website http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/gb10slt12 -252_spice.pdf) ************************************************************************** ************************************************************************** ************************************************************************** ************************************************************************** this model is provided "as is, where is, and with no warranty of any kind * either expressed or implied, including but not limited to any implied nd fitness for a particular purpose."
|
